English
简体中文
FIXED IND 33UH 160MA 4 OHM SMD
MOSFET N-CH 20V 3.9A SOT23-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 31mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 850mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 750mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
CSD22206WTexas Instruments |
MOSFET P-CH 8V 5A 9DSBGA |
|
BSC889N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOI7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO251A |
|
NTTFS4840NTAGRochester Electronics |
MOSFET N-CH 30V 4.6A/26A 8WDFN |
|
SFW9Z34TMRochester Electronics |
MOSFET P-CH 60V 18A D2PAK |
|
APT47M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A ISOTOP |
|
SIHB12N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A D2PAK |
|
NVMFS5C468NT1GRochester Electronics |
MOSFET N-CH 40V 12A/35A 5DFN |
|
SI3456DDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6.3A 6TSOP |
|
AOTF42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO220-3F |
|
BSC025N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 100A TDSON-8 |
|
STL3N65M2STMicroelectronics |
MOSFET N-CH 650V 2.3A POWERFLAT |