类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 700 V |
电流 - 连续漏极 (id) @ 25°c: | 12.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 360mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 150µA |
栅极电荷 (qg) (max) @ vgs: | 16.4 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 517 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 59.4W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO252-3 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK4197FSRochester Electronics |
MOSFET N-CH 600V 3.3A TO220-3 |
|
IRF614STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
RJ1L08CGNTLLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTL |
|
CSD18533Q5ATTexas Instruments |
MOSFET N-CH 60V 17A/100A 8VSON |
|
SUD09P10-195-GE3Vishay / Siliconix |
MOSFET P-CH 100V 8.8A TO252 |
|
APT60M80L2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 65A 264 MAX |
|
FQPF19N10Rochester Electronics |
MOSFET N-CH 100V 13.6A TO220F |
|
2N7002ET7GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 260MA SOT23-3 |
|
PSMN3R2-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |
|
IRF7457PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
IRFR120ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
|
SUD35N10-26P-E3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
APT20M20B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |