类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 8.7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 5.2A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 310 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 35W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SUD35N10-26P-E3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
APT20M20B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
BSP129L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS3600SRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SPB02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 67A TO252-3 |
|
IRFR120TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
NTB30N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP33N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO220AB |
|
APT12080JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 15A ISOTOP |
|
AOWF380A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |
|
STFU24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
|
IPW65R050CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 45A TO247-3-41 |