类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RUF025N02FRATLROHM Semiconductor |
MOSFET N-CH 20V 2.5A TUMT3 |
|
IRLR014TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IPW60R075CPFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 39A TO247-3 |
|
PMT200EPEXNexperia |
MOSFET P-CH 70V 2.4A SOT223 |
|
IRFL4310TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 1.6A SOT223 |
|
STP5NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 4.4A TO220FP |
|
IPB65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
YJL2304A-F2-0100HF |
N-CH MOSFET 30V 3.6A SOT-23-3L |
|
AUIRFR48ZTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
IRFS720BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA10N80C-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 10A TO3P |
|
IRFP254BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1335-TL-HRochester Electronics |
MOSFET P-CH 12V 2.5A 6SCH |