类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 8V |
rds on (max) @ id, vgs: | 180mOhm @ 11A, 8V |
vgs(th) (最大值) @ id: | 2.6V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 9.3 nC @ 4.5 V |
vgs (最大值): | ±18V |
输入电容 (ciss) (max) @ vds: | 760 pF @ 480 V |
场效应管特征: | - |
功耗(最大值): | 96W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHB18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO263 |
|
AOT270ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 21.5A/140A TO220 |
|
RM8N700TIRectron USA |
MOSFET N-CHANNEL 700V 8A TO220F |
|
TPH1400ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 24A 8-SOP |
|
IRLR8729TRLPBFRochester Electronics |
IRLR8729 - 20V-30V N-CHANNEL |
|
FDB8160Rochester Electronics |
MOSFET N-CH 30V 80A D2PAK |
|
NTF3055-100T1G-IRH1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
SQJ142ELP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 175A PPAK SO-8 |
|
CMPDM202PH TRCentral Semiconductor |
MOSFET P-CH 20V 2.3A SOT-23F |
|
SUM10250E-GE3Vishay / Siliconix |
MOSFET N-CH 250V 63.5A D2PAK |
|
STB70NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
|
IPW65R110CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO247-3 |
|
SCT3060ARC14ROHM Semiconductor |
SICFET N-CH 650V 39A TO247-4L |