







POTENTIOMETERS
MOSFET N-CH 200V 60A TO247
IC RF SWITCH SPDT 4GHZ 8MSOP
MEMORY CARD SDHC 8GB CLASS 6 MLC
| 类型 | 描述 |
|---|---|
| 系列: | Linear L2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 45mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 255 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 10500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 540W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FCPF125N65S3Rochester Electronics |
MOSFET N-CH 650V 24A TO220F |
|
|
MCM1208-TPMicro Commercial Components (MCC) |
MOSFET P-CH 12V 8A DFN2020-6J |
|
|
SIJA52ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 41.6A/131A PPAK |
|
|
SI7818DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 2.2A PPAK1212-8 |
|
|
BSP315PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 1.17A SOT223-4 |
|
|
XPH3R114MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 100A 8SOP |
|
|
IRF6644TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A DIRECTFET |
|
|
IRF443Rochester Electronics |
MOSFET N-CH 450V 4A TO204AE |
|
|
STL110N10F7STMicroelectronics |
MOSFET N-CH 100V 107A POWERFLAT |
|
|
STF7N105K5STMicroelectronics |
MOSFET N-CH 1050V 4A TO220FP |
|
|
IRL7833STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 150A D2PAK |
|
|
NVMFS5C468NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/37A 5DFN |
|
|
LND150N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |