类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 13.6mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 1.95V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 8.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 521 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 26W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTR1P02T1Rochester Electronics |
MOSFET P-CH 20V 1A SOT23-3 |
|
MTD3302T4Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDMS86350ET80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 25A/198A POWER56 |
|
NVMFS6B05NT1GRochester Electronics |
MOSFET N-CH 100V 5DFN |
|
BSC032NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 22A/84A TDSON |
|
FDP5500Rochester Electronics |
N CHANNEL ULTRAFET 55V, 80A, 7M |
|
SIHB33N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO263 |
|
SSM6J215FE(TE85L,FToshiba Electronic Devices and Storage Corporation |
MOSFET P CH 20V 3.4A ES6 |
|
SSM3K37CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 200MA CST3 |
|
SPA04N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO220-FP |
|
APT20M18LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
SIS476DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RCJ120N25TLROHM Semiconductor |
MOSFET N-CH 250V 12A LPT |