HEATSINK 45X45X10MM XCUT T412
MOSFET N-CH 550V 16A TO220FP
类型 | 描述 |
---|---|
系列: | MDmesh™ V |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 550 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 192mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1260 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 25W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPLK70R900P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
DMP2165UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.5A SOT323 T&R |
|
NTE2987NTE Electronics, Inc. |
MOSFET N-CH 100V 20A TO220 |
|
FDB050AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/80A D2PAK |
|
SISA10DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK1212-8 |
|
IRFP4468PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 195A TO247AC |
|
2N7002ET1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NTMFS6H818NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
DMP2540UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 4A U-WLB1515-9 |
|
NTMFS4935NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/93A 5DFN |
|
NVMYS1D3N04CTWGSanyo Semiconductor/ON Semiconductor |
TRENCH 6 40V SL NFET |
|
TSM120N06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 54A 8PDFN |
|
SIHH26N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 24A PPAK 8 X 8 |