English
简体中文
MOSFET N-CH 30V 30A PPAK1212-8
CONN FPC VERT 28POS 1.00MM SMD
INDUCT ARRAY 6 COIL 63.2UH SMD
OSC XO 945MHZ 3.3V LVDS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.7mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 51 nC @ 10 V |
| vgs (最大值): | +20V, -16V |
| 输入电容 (ciss) (max) @ vds: | 2425 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 39W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFP4468PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 195A TO247AC |
|
2N7002ET1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NTMFS6H818NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
DMP2540UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 4A U-WLB1515-9 |
|
NTMFS4935NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/93A 5DFN |
|
NVMYS1D3N04CTWGSanyo Semiconductor/ON Semiconductor |
TRENCH 6 40V SL NFET |
|
TSM120N06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 54A 8PDFN |
|
SIHH26N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 24A PPAK 8 X 8 |
|
FDI038AN06A0_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RSE002P03TLROHM Semiconductor |
MOSFET P-CH 30V 200MA EMT3 |
|
CSD18542KTTTTexas Instruments |
MOSFET N-CH 60V 200A/170A DDPAK |
|
BSP135L6906HTSA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IRFBC40ASTRRPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |