English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 11.9mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1680 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFX220N17T2Wickmann / Littelfuse |
MOSFET N-CH 170V 220A PLUS247-3 |
|
STD18N60M6STMicroelectronics |
MOSFET N-CH 600V 13A DPAK |
|
SSM6J501NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 10A 6UDFNB |
|
PMF250XN,115Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
G3R160MT12JGeneSiC Semiconductor |
SIC MOSFET N-CH 22A TO263-7 |
|
SI3460BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
|
RJL60S5DPP-E0#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD95N4LF3STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
|
ZXMN6A08GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
IRF1310NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO220AB |
|
RSD100N10TLROHM Semiconductor |
MOSFET N-CH 100V 10A CPT3 |
|
SIHG22N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |
|
IPB011N04LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
