English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.3mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4420 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.8W (Ta), 108W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSON-CLIP (3.3x3.3) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS5672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.6A/22A 8MLP |
|
RM6N800LDRectron USA |
MOSFET N-CHANNEL 800V 6A TO252-2 |
|
2SK3107-T1-ARochester Electronics |
MOSFET N-CH 30V 100MA SC75-3 USM |
|
NTHD3133PFT1GRochester Electronics |
MOSFET P-CH 20V 3.2A CHIPFET |
|
BUK7109-75AIE,118Rochester Electronics |
PFET, 75A I(D), 75V, 0.009OHM, 1 |
|
IRF7495TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 7.3A 8SO |
|
IPP80N06S2-H5Rochester Electronics |
IPP80N06 - 55V-60V N-CHANNEL AUT |
|
AOY66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 16.5/58A TO251B |
|
IRF9Z14LPBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A I2PAK |
|
5HN01M-TL-E-SARochester Electronics |
MOSFET N-CH 50V 100MA MCP |
|
SPA16N50C3Rochester Electronics |
SPA16N50 - 500V COOLMOS N-CHANNE |
|
FQPF2N60CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
PSMN038-100YLXNexperia |
MOSFET N-CH 100V 30A LFPAK56 |
