







MEMS OSC XO 161.1328MHZ LVDS SMD
N-CHANNEL POWER MOSFET
DIODE SCHOTTKY 650V 12A TO220FM
CANOPEN TO MODBUS RTU
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DMG3N60SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 3.3A TO220AB |
|
|
STP20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A TO220 |
|
|
NTBV45N06T4GRochester Electronics |
MOSFET N-CH 60V 45A D2PAK |
|
|
BSC205N10LS GRochester Electronics |
MOSFET N-CH 100V 7.4A/45A TDSON |
|
|
IPD80R2K7C3AATMA1IR (Infineon Technologies) |
MOSFET N-CH TO252-3 |
|
|
RM5N150S8Rectron USA |
MOSFET N-CHANNEL 150V 4.6A 8SOP |
|
|
SI2302DDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 2.9A SOT23-3 |
|
|
SIHW70N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 70A TO247AD |
|
|
STD3N62K3STMicroelectronics |
MOSFET N-CH 620V 2.7A DPAK |
|
|
IRF3205PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO220AB |
|
|
STI76NF75STMicroelectronics |
MOSFET N-CH 75V 80A I2PAK |
|
|
PMPB29XNE,115Rochester Electronics |
MOSFET N-CH 30V 5A DFN2020MD-6 |
|
|
FQP32N20CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |