类型 | 描述 |
---|---|
系列: | PowerTrench®, SyncFET™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Ta), 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.5mOhm @ 33A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 81 nC @ 10 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 5.118 pF @ 13 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 78W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PQFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SCH1330-TL-WRochester Electronics |
MOSFET P-CH 20V 1.5A SOT563/SCH6 |
|
SPU01N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO4482Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 6A 8SOIC |
|
FQPF6N25Rochester Electronics |
MOSFET N-CH 250V 4A TO220F |
|
SI4413CDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8-SOIC |
|
STP35NF10STMicroelectronics |
MOSFET N-CH 100V 40A TO220AB |
|
APT12057B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 22A T-MAX |
|
TPN30008NH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 9.6A 8TSON |
|
RM150N150HDRectron USA |
MOSFET N-CH 150V 150A TO263-2 |
|
SPB80N03S2L05Rochester Electronics |
80A, 30V, N-CHANNEL, MOSFET |
|
TK10E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220 |
|
NTD3817NT4GRochester Electronics |
MOSFET N-CH 16V 7.6A/34.5A DPAK |
|
SQM50020EL_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263 |