English
简体中文
MOSFET N-CH 250V 14A TO220AB
SMA-SJB/SMB-SJ G316 3I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 280mOhm @ 8.4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4378DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 19A 8SO |
|
IPP60R145CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
RUS100N02TBROHM Semiconductor |
MOSFET N-CH 20V 10A 8SOP |
|
IRLR6225PBFRochester Electronics |
MOSFET N-CH 20V 100A DPAK |
|
SIHD3N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
PMXB65ENEZNexperia |
MOSFET N-CH 30V 3.2A DFN1010D-3 |
|
UF3SC065007K4SUnitedSiC |
MOSFET N-CH 650V 120A TO247-4 |
|
BSD314SPEL6327Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM3K336R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3A SOT23F |
|
BUK7D36-60EXNexperia |
MOSFET N-CH 60V 5.5A/14A 6DFN |
|
BSS119L6433Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSC090N03MSGRochester Electronics |
BSC090N03 - 12V-300V N-CHANNEL P |
|
SISC06DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 27.6A/40A PPAK |