







 
                            CRYSTAL 38.4000MHZ 10PF SMD
 
                            MOSFET P-CH 60V 8SOIC
 
                            RF ATTENUATOR 6DB 50OHM SMA
 
                            HXT5004A-DNT-F8
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 60 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 110mOhm @ 4.5A, 10V | 
| vgs(th) (最大值) @ id: | 3V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 19.4 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 1030 pF @ 30 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 1.5W (Ta) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-SO | 
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | BSC160N15NS5ATMA1IR (Infineon Technologies) | MOSFET N-CH 150V 56A TDSON | 
|   | DKI06075Sanken Electric Co., Ltd. | MOSFET N-CH 60V 48A TO252 | 
|   | SI7460DP-T1-GE3Vishay / Siliconix | MOSFET N-CH 60V 11A PPAK SO-8 | 
|   | CSD16401Q5Texas Instruments | MOSFET N-CH 25V 38A/100A 8VSON | 
|   | IRF3808STRLPBFIR (Infineon Technologies) | MOSFET N-CH 75V 106A D2PAK | 
|   | DMTH10H4M5LPS-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 100V PWRDI5060 | 
|   | AUIRFS3004-7TRLIR (Infineon Technologies) | MOSFET N-CH 40V 240A D2PAK | 
|   | DMN3009SFGQ-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 30V 16A PWRDI3333 | 
|   | NTLJF4156NT1GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 2.5A 6WDFN | 
|   | PSMN8R3-40YS,115Nexperia | MOSFET N-CH 40V 70A LFPAK56 | 
|   | AUIRF3205ZSRochester Electronics | MOSFET N-CH 55V 75A D2PAK | 
|   | PHP20N06T,127Nexperia | MOSFET N-CH 55V 20.3A TO220AB | 
|   | SI2319DS-T1-GE3Vishay / Siliconix | MOSFET P-CH 40V 2.3A SOT23-3 |