English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8079 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 306W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD32N06-1GRochester Electronics |
MOSFET N-CH 60V 32A IPAK |
|
IAUS165N08S5N029ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 165A HSOG-8 |
|
AUIRF3710ZSIR (Infineon Technologies) |
MOSFET N-CH 100V 59A D2PAK |
|
DMN2041L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.4A SOT23-3 |
|
IRFBC40LPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO262-3 |
|
SQP120N06-06_GE3Vishay / Siliconix |
MOSFET N-CH 60V 119A TO220AB |
|
NTD95N02RT4Rochester Electronics |
MOSFET N-CH 24V 12A/32A DPAK |
|
2SK1968-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOSP21321Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 11A 8SOIC |
|
FDU044AN03LRochester Electronics |
MOSFET N-CH 30V 21A/35A IPAK |
|
NTD78N03T4GRochester Electronics |
MOSFET N-CH 25V 11.4A/78A DPAK |
|
TK9A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 9.3A TO220SIS |
|
SQ2301ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 20V 3.9A SOT23-3 |
