类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 6.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.2Ohm @ 3.7A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 130W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-262-3 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQP120N06-06_GE3Vishay / Siliconix |
MOSFET N-CH 60V 119A TO220AB |
|
NTD95N02RT4Rochester Electronics |
MOSFET N-CH 24V 12A/32A DPAK |
|
2SK1968-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOSP21321Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 11A 8SOIC |
|
FDU044AN03LRochester Electronics |
MOSFET N-CH 30V 21A/35A IPAK |
|
NTD78N03T4GRochester Electronics |
MOSFET N-CH 25V 11.4A/78A DPAK |
|
TK9A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 9.3A TO220SIS |
|
SQ2301ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 20V 3.9A SOT23-3 |
|
IRF3704ZSPBFRochester Electronics |
MOSFET N-CH 20V 67A D2PAK |
|
BUZ32H3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFH12N90PWickmann / Littelfuse |
MOSFET N-CH 900V 12A TO247AD |
|
APT1003RSFLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 1KV 4A D3PAK |
|
IRF8721PBFRochester Electronics |
MOSFET N-CH 30V 14A 8SO |