English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11.4A (Ta), 78A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6mOhm @ 78A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.25 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.4W (Ta), 64W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK9A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 9.3A TO220SIS |
|
SQ2301ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 20V 3.9A SOT23-3 |
|
IRF3704ZSPBFRochester Electronics |
MOSFET N-CH 20V 67A D2PAK |
|
BUZ32H3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFH12N90PWickmann / Littelfuse |
MOSFET N-CH 900V 12A TO247AD |
|
APT1003RSFLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 1KV 4A D3PAK |
|
IRF8721PBFRochester Electronics |
MOSFET N-CH 30V 14A 8SO |
|
DMTH4008LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI5060 |
|
BUK7Y72-80EXNexperia |
MOSFET N-CH 80V 16A LFPAK56 |
|
HUF75339G3Rochester Electronics |
MOSFET N-CH 55V 75A TO247-3 |
|
NTD3055-150T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
FDD6780ARochester Electronics |
16.4A, 25V, 0.0086OHM, N-CHANNEL |
|
STW28N60M2STMicroelectronics |
MOSFET N-CH 600V 24A TO247 |
