类型 | 描述 |
---|---|
系列: | CoolMOS™ CE |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 3.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.5Ohm @ 1.1A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 90µA |
栅极电荷 (qg) (max) @ vgs: | 9.4 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 200 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 49W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO251-3 |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS4C08NT1G-001Rochester Electronics |
MOSFET N-CH 30V 9A/52A 5DFN |
|
R6004ENDTLROHM Semiconductor |
MOSFET N-CH 600V 4A CPT3 |
|
IRFZ14STRLPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
NTE2392NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 40A TO3 |
|
IRFS3006TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A D2PAK |
|
FDZ375PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 4WLCSP |
|
NTDV20N06T4GRochester Electronics |
MOSFET N-CH 60V 20A DPAK |
|
STW56N60M2STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
|
IRFR9024TRLPBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
IRFBC40PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
IXTR102N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 54A ISOPLUS247 |
|
SQ2364EES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 2A SOT23-3 |
|
IMZ120R030M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 56A TO247-4 |