类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3.8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 122 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5670 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 3.5W (Ta), 7.8W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SO |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI5476DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 12A CHIPFET |
|
IRF740RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2N7002 TR PBFREECentral Semiconductor |
MOSFET N-CH 60V 115MA SOT23 |
|
HUF75344P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM900N10CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 100V 15A TO252 |
|
FQU5N40TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 3.4A IPAK |
|
TPCA8128,LQ(CMToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 34A 8SOP |
|
DMN2990UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 780MA 3DFN |
|
IRLS4030TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
|
NTD4813NH-35GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A IPAK |
|
AON6284AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 80V 48A 8DFN |
|
IRF7469TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 9A 8SO |
|
CSD17585F5Texas Instruments |
MOSFET N-CH 30V 5.9A 3PICOSTAR |