类型 | 描述 |
---|---|
系列: | U-MOSIX-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8.9mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 7.5 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1130 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta) |
工作温度: | 150°C (TA) |
安装类型: | Surface Mount |
供应商设备包: | 6-UDFNB (2x2) |
包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NX3008PBKMB,315Rochester Electronics |
MOSFET P-CH 30V 300MA DFN1006B-3 |
|
IPU80R750P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A TO251-3 |
|
STFI7N80K5STMicroelectronics |
MOSFET N-CH 800V 6A I2PAKFP |
|
FQI19N20TURochester Electronics |
MOSFET N-CH 200V 19.4A I2PAK |
|
STP9NK60ZSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
|
IPB80P04P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
MCU15N10A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 15A DPAK |
|
FDZ371PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 4WLCSP |
|
IRFR014TRLPBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
2SJ651Rochester Electronics |
MOSFET P-CH 60V 20A TO220ML |
|
IXTP42N25PWickmann / Littelfuse |
MOSFET N-CH 250V 42A TO220AB |
|
NTMFS4108NT1GRochester Electronics |
MOSFET N-CH 30V 13.5A 5DFN |
|
PMXB360ENEAZNexperia |
MOSFET N-CH 80V 1.1A DFN1010D-3 |