TRANS PNP 40V 0.2A SOT883
MOSFET P-CH 55V 31A IPAK
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 65mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 110W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | IPAK (TO-251) |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB020N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
FDB2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |
|
SI7370ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
|
SI4435DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
|
STL6N2VH5STMicroelectronics |
MOSFET N-CH 20V POWERFLAT |
|
AOT296LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 9.5A/70A TO220 |
|
NDS336PRochester Electronics |
MOSFET P-CH 20V 1.2A SUPERSOT3 |
|
CSD18503Q5ATexas Instruments |
MOSFET N-CH 40V 19A/100A 8VSON |
|
HUF76609D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A TO252AA |
|
FQI1P50TURochester Electronics |
MOSFET P-CH 500V 1.5A I2PAK |
|
AUIRFR3607TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
UF3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |