English
简体中文
FIXED IND 2.2UH 1.75A 84 MOHM
MOSFET N-CH 60V 2A SOT23
TERM TURRET SINGLE L=4.75MM TIN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 85mOhm @ 3.2A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 606 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 800mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP80N04S2L03AKSA1Rochester Electronics |
MOSFET N-CH 40V 80A TO220-3 |
|
IRFB7437PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
|
SSM3H137TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 34V 2A UFM |
|
ATP108-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 70A ATPAK |
|
IRLR8743TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 160A DPAK |
|
IRLR3717PBFRochester Electronics |
MOSFET N-CH 20V 120A DPAK |
|
CSD22205LTTexas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
|
FDMC8026SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/21A 8MLP |
|
SPD08N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP109N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263 |
|
TK20N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO247 |
|
RM2P60S2Rectron USA |
MOSFET P-CHANNEL 60V 1.9A SOT23 |
|
DMP3007SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 70A POWERDI3333 |