English
简体中文
MOSFET N-CH 40V 25A LFPAK33
RF ANT 900MHZ/1.8GHZ WHIP STR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 20mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3.6V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 10.2 nC @ 10 V |
| vgs (最大值): | +20V, -10V |
| 输入电容 (ciss) (max) @ vds: | 598 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 38W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK33 |
| 包/箱: | SOT-1210, 8-LFPAK33 (5-Lead) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPZA60R045P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 61A TO247-4-3 |
|
IPP80N06S2L11AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3-1 |
|
PSMN6R1-30YLDXNexperia |
MOSFET N-CH 30V 66A LFPAK56 |
|
SPA04N60C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 4.5A TO220-FP |
|
SPA21N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO220-FP |
|
BSS84AKW,115Nexperia |
MOSFET P-CH 50V 150MA SOT323 |
|
FDFM2N111Rochester Electronics |
MOSFET N-CH 20V 4A MICROFET |
|
SFR9214TFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSP88E6327Rochester Electronics |
MOSFET N-CH 240V 350MA SOT223-4 |
|
FDS6298Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A 8SOIC |
|
PHT6N06T,135Rochester Electronics |
MOSFET N-CH 55V 5.5A SC73 |
|
FDS6162N7Rochester Electronics |
MOSFET N-CH 20V 23A 8SO |
|
BSS84W-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 130MA SOT323 |