English
简体中文
RES SMD 390 OHM 5% 1.4W 0505
AUTOMOTIVE HEXFET POWER MOSFET
CONN PLUG FMALE 128P GOLD CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 84A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.6mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 66 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.17 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4.2W (Ta), 63W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK16E60W5,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
|
AUIRFR2905ZIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
FDMS86182Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 78A 8PQFN |
|
IPA80R1K0CEXKSA1Rochester Electronics |
MOSFET N-CH 800V 3.6A TO220 |
|
TJ8S06M3L(T6L1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 8A DPAK |
|
FQP20N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21A TO220-3 |
|
STFI130N10F3STMicroelectronics |
MOSFET N-CH 100V 46A I2PAKFP |
|
STW62NM60NSTMicroelectronics |
MOSFET N-CH 600V 65A TO247 |
|
IPI22N03S4L15AKSA1Rochester Electronics |
MOSFET N-CH 30V 22A TO262-3 |
|
SI7655ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 40A PPAK1212-8S |
|
IPW60R099CPRochester Electronics |
MOSFET N-CH 600V 31A TO247-3-1 |
|
NVHL027N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
TPH3206PDTransphorm |
GANFET N-CH 600V 17A TO220AB |