







MOSFET N-CH 600V 12A D2PAK
CONN ACC MARKER STRIP UNPRINTED
PREM 3D FLMNT SILVER
BOX S STEEL 10.24"L X 10.24"W
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ P7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 280mOhm @ 3.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 190µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 761 pF @ 400 V |
| 场效应管特征: | - |
| 功耗(最大值): | 53W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AUIRL1404SRochester Electronics |
MOSFET N-CH 40V 160A DPAK |
|
|
STD13N60M6STMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
|
|
IPI70N10S3L12AKSA1Rochester Electronics |
MOSFET N-CH 100V 70A TO262-3 |
|
|
SIHW47N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AD |
|
|
IRF9620SPBFVishay / Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
|
|
APT20M11JLLRoving Networks / Microchip Technology |
MOSFET N-CH 200V 176A ISOTOP |
|
|
IPB65R310CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A D2PAK |
|
|
IXTP12N50PMWickmann / Littelfuse |
MOSFET N-CH 500V 6A TO220AB |
|
|
PMV33UPE,215Nexperia |
MOSFET P-CH 20V 4.4A TO236AB |
|
|
SQ4850EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SO |
|
|
FCP4N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A TO220-3 |
|
|
STP315N10F7STMicroelectronics |
MOSFET N-CH 100V 180A TO220 |
|
|
RD3L03BATTL1ROHM Semiconductor |
PCH -60V -35A POWER MOSFET - RD3 |