类型 | 描述 |
---|---|
系列: | ThunderFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 14.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V |
rds on (max) @ id, vgs: | 105mOhm @ 7A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 7.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 608 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 57W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQD12N20LTM-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO252 |
|
IRL530NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
AON2406Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 8A 6DFN |
|
IXTT90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 90A TO268 |
|
NDB6030LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4863NAT4GRochester Electronics |
MOSFET N-CH 25V 9.2A/49A DPAK |
|
IRFS634B_FP001Rochester Electronics |
MOSFET N-CH 250V 8.1A TO220F |
|
SI1062X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V SC89-3 |
|
RM2303Rectron USA |
MOSFET P-CHANNEL 30V 2A SOT23 |
|
FKP300ASanken Electric Co., Ltd. |
MOSFET N-CH 300V 30A TO3PF |
|
BUK9M5R2-30EXNexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
STH12N120K5-2STMicroelectronics |
MOSFET N-CH 1200V 12A H2PAK-2 |
|
SIHFL9110TR-GE3Vishay / Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |