English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 100mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 0.9V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 443 pF @ 6 V |
| 场效应管特征: | Standard |
| 功耗（最大值）: | 0.49mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-323 |
| 包/箱: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IMBG120R140M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 18A TO263 |
|
BF2040E6814HTSARochester Electronics |
RF N-CHANNEL MOSFET |
|
FDME430NTRochester Electronics |
MOSFET N-CH 30V 6A MICROFET |
|
SIHF9640S-GE3Vishay / Siliconix |
MOSFET P-CH 200V 11A D2PAK |
|
STP32N65M5STMicroelectronics |
MOSFET N-CH 650V 24A TO220AB |
|
BSC029N025SGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOT15S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO220 |
|
2SK3700(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 5A TO3P |
|
PH6325L,115Rochester Electronics |
MOSFET N-CH 25V 78.7A LFPAK56 |
|
STD3NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 2.5A IPAK |
|
FCH47N60-F133Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
|
TK30S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 30A DPAK |
|
SPS02N60C3Rochester Electronics |
MOSFET N-CH 650V 1.8A TO251-3 |
