English
简体中文
FUSE CERAMIC 500MA 250VAC 5X20MM
MOSFET N-CH 900V 5A TO3P
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 2.5Ohm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 1150 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P(N) |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PH6325L,115Rochester Electronics |
MOSFET N-CH 25V 78.7A LFPAK56 |
|
STD3NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 2.5A IPAK |
|
FCH47N60-F133Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
|
TK30S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 30A DPAK |
|
SPS02N60C3Rochester Electronics |
MOSFET N-CH 650V 1.8A TO251-3 |
|
STW65N80K5STMicroelectronics |
MOSFET N-CH 800V 46A TO247 |
|
IXTQ10P50PWickmann / Littelfuse |
MOSFET P-CH 500V 10A TO3P |
|
SSM3K35CTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA CST3C |
|
FDMA8884Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK9Y58-75B,115Nexperia |
MOSFET N-CH 75V 20.73A LFPAK56 |
|
APT8014L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 52A 264 MAX |
|
FQB11P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 11.4A D2PAK |
|
STF16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |