English
简体中文
AMBER/610NM
MOSFET N-CH 30V 6.4A 8SO
IC EEPROM 2KBIT SPI 2MHZ 8SOIC
CAP TRIMMER 10-150PF 100V TH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 24mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12.9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 608 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPW65R045C7FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 46A TO247-3 |
|
FDMA8051LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 10A 6MICROFET |
|
BSZ0703LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IRF640SPBFVishay / Siliconix |
MOSFET N-CH 200V 18A D2PAK |
|
IPB80N06S4L05ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO263-3 |
|
DN2535N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 350V 120MA TO92 |
|
RSM002P03T2LROHM Semiconductor |
MOSFET P-CH 30V 200MA VMT3 |
|
IRLR110TRLVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IPB025N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
NVTFS5116PLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 6A 8WDFN |
|
STD10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A DPAK |
|
C3M0015065DWolfspeed - a Cree company |
SICFET N-CH 650V 120A TO247-3 |
|
MMBF2201NT1Rochester Electronics |
MOSFET N-CH 20V 300MA SC70-3 |