类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 480mOhm @ 6.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2.055 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 48W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQD9N25TM-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
BSC010NE2LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 38A/100A TDSON |
|
STD16NF06T4STMicroelectronics |
MOSFET N-CH 60V 16A DPAK |
|
IPS135N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIJ470DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 58.8A PPAK SO-8 |
|
IRFU4510PBFRochester Electronics |
MOSFET N-CH 100V 56A IPAK |
|
IRFR224PBFVishay / Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
|
2SK1445LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FQB85N06TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ464EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
|
AO4406AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A 8SOIC |
|
DMP3018SFK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.2A 6UDFN |
|
PML340SN,118Rochester Electronics |
MOSFET N-CH 220V 7.3A DFN3333-8 |