English
简体中文
HEATSINK 30X30X25MM R-TAB T766
MOSFET N-CH 60V 16A DPAK
IC AUTHENTICATION CHIP 8UDFN
TRANS PNP 180V 2A TO-220F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 70mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 400 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS135N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIJ470DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 58.8A PPAK SO-8 |
|
IRFU4510PBFRochester Electronics |
MOSFET N-CH 100V 56A IPAK |
|
IRFR224PBFVishay / Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
|
2SK1445LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FQB85N06TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ464EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
|
AO4406AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A 8SOIC |
|
DMP3018SFK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.2A 6UDFN |
|
PML340SN,118Rochester Electronics |
MOSFET N-CH 220V 7.3A DFN3333-8 |
|
CSD17578Q5ATTexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
|
IPB65R225C7ATMA1Rochester Electronics |
MOSFET N-CH 650V 11A D2PAK |
|
FQPF5N20LRochester Electronics |
MOSFET N-CH 200V 3.5A TO220F |