English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 800mA (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4.6Ohm @ 400mA, 0V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 12.7 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 312 pF @ 25 V |
| 场效应管特征: | Depletion Mode |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT10035JLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 25A ISOTOP |
|
NTD3055-150-1GRochester Electronics |
MOSFET N-CH 60V 9A IPAK |
|
IRF820PBFVishay / Siliconix |
MOSFET N-CH 500V 2.5A TO220AB |
|
SI7812DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 16A PPAK1212-8 |
|
IRLR8259PBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFP9240Rochester Electronics |
MOSFET P-CH 200V 12A TO247-3 |
|
STW28NM50NSTMicroelectronics |
MOSFET N-CH 500V 21A TO247-3 |
|
FDD5N50TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A DPAK |
|
ZVNL110AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 320MA TO92-3 |
|
APT10035B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 28A T-MAX |
|
FQI17N08TURochester Electronics |
MOSFET N-CH 80V 16.5A I2PAK |
|
FDS4480Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 10.8A 8SOIC |
|
NVMFS5C410NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |
