类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 28A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 38mOhm @ 14A, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4.36 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220ML |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQA46N15Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 50A TO3P |
|
DMP510DL-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 180MA SOT23-3 |
|
FDP047AN08A0-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 80A TO220-3 |
|
BUK9Y25-80E,115Nexperia |
MOSFET N-CH 80V 37A LFPAK56 |
|
2SK536-MTK-TB-ERochester Electronics |
MOSFET N-CH 50V 0.1A 3CP |
|
STD90N03LSTMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
MCH6337-TL-HRochester Electronics |
MOSFET P-CH 20V 4.5A 6MCPH |
|
IPB120P04P404ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 120A TO263-3 |
|
RJK5033DPD-00#J2Renesas Electronics America |
MOSFET N-CH 500V 6A MP3A |
|
IXTY8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO252 |
|
IRFR7540TRLPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SUP40010EL-GE3Vishay / Siliconix |
MOSFET N-CH 40V 120A TO220AB |
|
DMN1008UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 12.2A 6UDFN |