English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 160mOhm @ 8.2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 910 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.75W (Ta), 108W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIS862DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A PPAK1212-8 |
|
2N7002T-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 115MA SOT523 |
|
TSM950N10CW RPGTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 6.5A SOT223 |
|
SK8403170LPanasonic |
MOSFET N-CH 30V 16A 8HSSO |
|
PSMN3R7-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 97A LFPAK56 |
|
SPD50P03LRochester Electronics |
MOSFET P-CH 30V 50A TO252-5 |
|
IXTH140P10TWickmann / Littelfuse |
MOSFET P-CH 100V 140A TO247 |
|
SPI08N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP038AN06A0-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
|
SUM80090E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 128A D2PAK |
|
STW3N170STMicroelectronics |
MOSFET N-CH 1700V 2.6A TO247-3 |
|
AUIRLR3105Rochester Electronics |
MOSFET N-CH 55V 25A DPAK |
|
NTMFS4927NCT1GRochester Electronics |
MOSFET N-CH 30V 7.9A/38A 5DFN |
