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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7Y10-30B,115Nexperia |
MOSFET N-CH 30V 67A LFPAK56 |
|
AOTF3N80Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 800V 2.8A TO220-3F |
|
SQ3461EV-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 8A 6TSOP |
|
IPB80P03P4L04ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO263-3 |
|
C3M0025065KWolfspeed - a Cree company |
GEN 3 650V 25 M SIC MOSFET |
|
TK31V60X,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
|
CSD16327Q3Texas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
MTB30P06VRochester Electronics |
P-CHANNEL POWER MOSFET |
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IRF644PBFVishay / Siliconix |
MOSFET N-CH 250V 14A TO220AB |
|
IPW60R199CPFKSA1Rochester Electronics |
600V COOLMOS N-CHANNEL |
|
VN2460N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 160MA TO92-3 |
|
STD2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A DPAK |
|
ISL9N310AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
