English
简体中文
MOSFET N-CH 60V 20A TO220-3
RF ATTENUATOR 4DB 50OHM 0805
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 60mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 590 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 53W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON7400BAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/40A 8DFN |
|
IPB320N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A D2PAK |
|
SIHG24N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO247AC |
|
PMZB1200UPEYLNexperia |
MOSFET P-CH 30V 410MA DFN1006B-3 |
|
FK3303010LPanasonic |
MOSFET N-CH 30V 100MA SSSMINI3 |
|
SIHG068N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 41A TO247AC |
|
IPP042N03LGRochester Electronics |
IPP042N03 - 12V-300V N-CHANNEL P |
|
STB16NF06LT4STMicroelectronics |
MOSFET N-CH 60V 16A D2PAK |
|
PSMN2R6-60PSQNexperia |
MOSFET N-CH 60V 150A TO220AB |
|
IRF1405ZSPBFRochester Electronics |
MOSFET N-CH 55V 75A TO263-3-2 |
|
TSM210N02CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
|
BSO040N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 16A 8DSO |
|
PSMN3R2-40YLDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |