类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 52mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1725 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3W (Ta), 136W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF9540PBFVishay / Siliconix |
MOSFET P-CH 100V 19A TO220AB |
|
STP265N6F6AGSTMicroelectronics |
MOSFET N-CH 60V 180A TO220 |
|
IRFD220PBFVishay / Siliconix |
MOSFET N-CH 200V 800MA 4DIP |
|
FDS6670ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A 8SOIC |
|
RCX120N20ROHM Semiconductor |
MOSFET N-CH 200V 12A TO220FM |
|
TSM60N1R4CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 3.3A TO251 |
|
IRFH5255TRPBFRochester Electronics |
MOSFET N-CH 25V 15A/51A PQFN |
|
CSD17585F5TTexas Instruments |
MOSFET N-CH 30V 5.9A 3PICOSTAR |
|
IRLZ44ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
IPP70N04S406AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-3-1 |
|
BUK9675-100A,118Rochester Electronics |
23A, 100V, 0.084OHM, N-CHANNEL M |
|
NVTFS5C466NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 51A 8WDFN |
|
RK7002BT116ROHM Semiconductor |
MOSFET N-CH 60V 250MA SST3 |