类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFPG30PBFVishay / Siliconix |
MOSFET N-CH 1000V 3.1A TO247-3 |
|
STWA88N65M5STMicroelectronics |
MOSFET N-CH 650V 84A TO247 |
|
STD1NK60-1STMicroelectronics |
MOSFET N-CH 600V 1A IPAK |
|
FQB8N60CFTMRochester Electronics |
MOSFET N-CH 600V 6.26A D2PAK |
|
IRF9530NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 14A TO220AB |
|
BUK9E8R5-40E,127Rochester Electronics |
MOSFET N-CH 40V 75A I2PAK |
|
CDM7-650 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 650V 7A DPAK |
|
DMP3130LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.5A SOT23 |
|
FDMS8050ET30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 55A/423A POWER56 |
|
CSD19535KCSTexas Instruments |
MOSFET N-CH 100V 150A TO220-3 |
|
SQD40020E_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
CSD13385F5TTexas Instruments |
MOSFET N-CH 12V 4.3A 3PICOSTAR |
|
H5N2007FN-ERochester Electronics |
N-CHANNEL POWER MOSFET |