English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.7V, 4.5V |
| rds on (max) @ id, vgs: | 180mOhm @ 930mA, 4.5V |
| vgs(th) (最大值) @ id: | 700mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.4 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 160 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 625mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD6414ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 32A DPAK |
|
MSJPF20N65-BPMicro Commercial Components (MCC) |
MOSFET N-CH 650V 11A TO220F |
|
SIS443DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 35A PPAK 1212-8 |
|
2N6756Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQPF2P25Rochester Electronics |
MOSFET P-CH 250V 1.8A TO220F |
|
SIHW47N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AD |
|
BSB008NE2LXXUMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 46A/180A 2WDSON |
|
STP24N60DM2STMicroelectronics |
MOSFET N-CH 600V 18A TO220 |
|
IRFS4321TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 85A D2PAK |
|
DMP45H21DHE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 600MA SOT223 |
|
AOTF11S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO220-3F |
|
US5U1TRROHM Semiconductor |
MOSFET N-CH 30V 1.5A TUMT5 |
|
IPB031N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
