类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 7.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 600mOhm @ 4.6A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 350µA |
栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 790 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 83W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO262-3 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFR38N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 28A ISOPLUS247 |
|
DMP21D0UFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 770MA 3DFN |
|
BUK7E2R6-60E,127Nexperia |
MOSFET N-CH 60V 120A I2PAK |
|
NTGS3443T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A 6TSOP |
|
FQB9N08TMRochester Electronics |
MOSFET N-CH 80V 9.3A D2PAK |
|
SUD25N15-52-BE3Vishay / Siliconix |
MOSFET N-CH 150V 25A DPAK |
|
NTD20N03L27-001Rochester Electronics |
MOSFET N-CH 30V 20A IPAK |
|
NDD02N60ZT4GRochester Electronics |
600V 2.2A SINGLE N-CHANNEL |
|
MCAC80N06Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 80A DFN5060 |
|
NTMFS4122NT1GRochester Electronics |
MOSFET N-CH 30V 9.1A 5DFN |
|
SIHH11N65EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 11A PPAK 8 X 8 |
|
RJK0330DPB-01#J0Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
|
FQP6N70Rochester Electronics |
6.2A, 700V, 1.5OHM, N-CHANNEL, |