类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 11mOhm @ 5A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 44 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1860 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | U-DFN2020-6 (Type F) |
包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
BUK6D72-30EXNexperia |
MOSFET N-CH 30V 4A/11A 6DFN |
![]() |
FQI17P10TURochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
NTE2379NTE Electronics, Inc. |
MOSFET N-CHANNEL 600V 6.2A TO220 |
![]() |
IPB80N06S208ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
![]() |
PSMN5R5-60YS,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
![]() |
ECH8402-TL-ERochester Electronics |
MOSFET N-CH 30V 10A 8ECH |
![]() |
NTMFS5C646NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
![]() |
G2R1000MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO247-3 |
![]() |
FQD8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK |
![]() |
BSH205G2ARNexperia |
MOSFET P-CH 20V 2.6A TO236AB |
![]() |
STB23NM50NSTMicroelectronics |
MOSFET N-CH 500V 17A D2PAK |
![]() |
SCT3160KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 17A TO247N |
![]() |
AUIRFS3806Rochester Electronics |
MOSFET N-CH 60V 43A D2PAK |