English
简体中文
MOSFET N-CH 30V 4A/11A 6DFN
MOSFET P-CH 30V 7A 8SOIC
CONN HEADER VERT 11POS 3.96MM
SENSOR 1500PSI 7/16-20UNF 4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta), 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 72mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 100 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 15W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN2020MD-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQI17P10TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTE2379NTE Electronics, Inc. |
MOSFET N-CHANNEL 600V 6.2A TO220 |
|
IPB80N06S208ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
PSMN5R5-60YS,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
ECH8402-TL-ERochester Electronics |
MOSFET N-CH 30V 10A 8ECH |
|
NTMFS5C646NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
G2R1000MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO247-3 |
|
FQD8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK |
|
BSH205G2ARNexperia |
MOSFET P-CH 20V 2.6A TO236AB |
|
STB23NM50NSTMicroelectronics |
MOSFET N-CH 500V 17A D2PAK |
|
SCT3160KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 17A TO247N |
|
AUIRFS3806Rochester Electronics |
MOSFET N-CH 60V 43A D2PAK |
|
FDB8878Rochester Electronics |
MOSFET N-CH 30V 48A TO263 |