English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 28mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1275 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.2W (Ta), 1.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP80N6F6STMicroelectronics |
MOSFET N-CH 60V 110A TO220 |
|
FQU2N80TURochester Electronics |
MOSFET N-CH 800V 1.8A IPAK |
|
TPH11003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 32A 8SOP |
|
IRL3714ZSPBFRochester Electronics |
MOSFET N-CH 20V 36A D2PAK |
|
NVD5865NLT4GRochester Electronics |
MOSFET N-CH 60V 10A/46A DPAK |
|
IXFP130N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 130A TO220AB |
|
TK12Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 11.5A IPAK |
|
IPD25N06S240ATMA1Rochester Electronics |
MOSFET N-CH 55V 29A TO252-3 |
|
IPA041N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-FP |
|
DMP1022UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.5A 6UDFN |
|
DMP22D6UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 430MA SOT523 |
|
AOWF10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO262F |
|
SSR4N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
