HEATSINK 40X40X30MM L-TAB T766
MOSFET N-CH 1200V 6A TO263
CABINET STEEL BLU/WHT 13"L X 8"W
类型 | 描述 |
---|---|
系列: | HiPerFET™, PolarP2™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.4Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 92 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2830 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (IXFA) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IGLD60R070D1AUMA1IR (Infineon Technologies) |
GANFET N-CH 600V 15A LSON-8 |
|
DMT3009LFVWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A PWRDI3333 |
|
TN2640K4-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 500MA TO252 |
|
PHP45NQ11T,127Rochester Electronics |
MOSFET N-CH 105V 47A TO220AB |
|
AOWF600A70FAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO262F |
|
IXTP150N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 150A TO220 |
|
IPD70N03S4L04ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 70A TO252-3 |
|
SQP100N04-3M6_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO220AB |
|
AOT25S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 25A TO220 |
|
RM4N650LDRectron USA |
MOSFET N-CHANNEL 650V 4A TO252-2 |
|
FDS6673AZRochester Electronics |
MOSFET P-CH 30V 14.5A 8SOIC |
|
IPD50N06S4L12ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-31 |
|
SIHB22N60EL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |