类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 150A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 7.2mOhm @ 75A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 480W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD70N03S4L04ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 70A TO252-3 |
|
SQP100N04-3M6_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO220AB |
|
AOT25S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 25A TO220 |
|
RM4N650LDRectron USA |
MOSFET N-CHANNEL 650V 4A TO252-2 |
|
FDS6673AZRochester Electronics |
MOSFET P-CH 30V 14.5A 8SOIC |
|
IPD50N06S4L12ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-31 |
|
SIHB22N60EL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
|
IRFR120TRRPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
IXFA36N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 36A TO263AA |
|
SIR800ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50.2A/177A PPAK |
|
SQ4005EY-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 15A 8SOIC |
|
IXFH120N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 120A TO247 |
|
IPP65R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |