类型 | 描述 |
---|---|
系列: | U-MOSVIII-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 12.3mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 4V @ 300µA |
栅极电荷 (qg) (max) @ vgs: | 22 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1900 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 1.6W (Ta), 48W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP Advance (5x5) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
3LN01SS-TL-HRochester Electronics |
MOSFET N-CH 30V 150MA SMCP |
|
TK28A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 27.6A TO220SIS |
|
IXTT68P20TWickmann / Littelfuse |
MOSFET P-CH 200V 68A TO268 |
|
STW45NM50STMicroelectronics |
MOSFET N-CH 500V 45A TO247-3 |
|
PHB20N06T,118Rochester Electronics |
MOSFET N-CH 55V 20.3A D2PAK |
|
HUFA75623S3STRochester Electronics |
MOSFET N-CH 100V 22A D2PAK |
|
AUIRF7759L2TRIR (Infineon Technologies) |
MOSFET N-CH 75V 375A DIRECTFET |
|
IPW60R280E6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO247-3 |
|
IXFR24N80PWickmann / Littelfuse |
MOSFET N-CH 800V 13A ISOPLUS247 |
|
RM15N650TIRectron USA |
MOSFET N-CHANNEL 650V 15A TO220F |
|
BSC084P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 14.9A 8TDSON |
|
IRFR1N60ATRLPBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
NVD6495NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25A DPAK |