类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 70A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V, 20V |
rds on (max) @ id, vgs: | 6.7mOhm @ 20A, 20V |
vgs(th) (最大值) @ id: | 3.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2760 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 90W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-251A |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK7Y54-75B,115Rochester Electronics |
PFET, 21.4A I(D), 75V, 0.054OHM, |
|
TSM026NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 168A 8PDFN |
|
IPP65R095C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO220-3 |
|
MTM761100LBFPanasonic |
MOSFET P-CH 12V 4A WSMINI6 |
|
CMUDM8005 TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 650MA SOT523 |
|
TPHR8504PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8SOP |
|
STF6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A TO220FP |
|
SIHP23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO220AB |
|
TK4A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 4A TO220SIS |
|
IPW65R080CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 43.3A TO247-3 |
|
UJ3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
SPB11N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
FQP7N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.6A TO220-3 |