English
简体中文
MOSFET N-CH 100V 140A MAX247
IC EEPROM 16KBIT SPI 10MHZ 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MESH OVERLAY™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 140A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 11mOhm @ 70A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 600 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 12600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 450W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | MAX247™ |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPZ40N04S58R4ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON-32 |
|
TSM1NB60CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 1A TO251 |
|
IPD50N06S214ATMA1Rochester Electronics |
MOSFET N-CH 55V 50A TO252-3 |
|
SI4442DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15A 8SO |
|
BSZ088N03LSGRochester Electronics |
BSZ088N03 - 12V-300V N-CHANNEL P |
|
IRF8301MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 34A DIRECTFET |
|
CPH3340-TL-ERochester Electronics |
MOSFET P-CH 20V 5A 3CPH |
|
UPA2520T1H-T1-ATRochester Electronics |
MOSFET N-CH 30V 10A 8VSOF |
|
SIHJ690N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 5.6A PPAK SO-8 |
|
RAL035P01TCRROHM Semiconductor |
MOSFET P-CH 12V 3.5A TUMT6 |
|
IPD90N06S404ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
IRLZ14STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
DMP2004TK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 430MA SOT523 |