类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 34A (Ta), 192A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.5mOhm @ 32A, 10V |
vgs(th) (最大值) @ id: | 2.35V @ 150µA |
栅极电荷 (qg) (max) @ vgs: | 77 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6140 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.8W (Ta), 89W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DIRECTFET™ MT |
包/箱: | DirectFET™ Isometric MT |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CPH3340-TL-ERochester Electronics |
MOSFET P-CH 20V 5A 3CPH |
|
UPA2520T1H-T1-ATRochester Electronics |
MOSFET N-CH 30V 10A 8VSOF |
|
SIHJ690N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 5.6A PPAK SO-8 |
|
RAL035P01TCRROHM Semiconductor |
MOSFET P-CH 12V 3.5A TUMT6 |
|
IPD90N06S404ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
IRLZ14STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
DMP2004TK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 430MA SOT523 |
|
SI6423DQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 8.2A 8TSSOP |
|
RD3L140SPTL1ROHM Semiconductor |
MOSFET P-CH 60V 14A TO252 |
|
IXFT12N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO268 |
|
NTD18N06L-1GRochester Electronics |
MOSFET N-CH 60V 18A IPAK |
|
NVMFS5C410NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
IPP180N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO220-3 |